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Datasheets for 120V

Datasheets found :: 477
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 2N1073B PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V Motorola
182 2N1724A Trans GP BJT NPN 120V 5A 3-Pin TO-61 New Jersey Semiconductor
183 2N2984 Trans GP BJT NPN 120V 3A 3-Pin TO-5 New Jersey Semiconductor
184 2N2984A Trans GP BJT NPN 120V 3A 3-Pin TO-5 New Jersey Semiconductor
185 2N2986 Trans GP BJT NPN 120V 3A 3-Pin TO-5 New Jersey Semiconductor
186 2N3495 Trans GP BJT PNP 120V 3-Pin TO-39 New Jersey Semiconductor
187 2N3497 0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. Continental Device India Limited
188 2N3497 Trans GP BJT NPN 120V 3-Pin TO-18 Box New Jersey Semiconductor
189 2N4346 Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
190 2N4348 Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
191 2N4863 Trans GP BJT NPN 120V 2A 3-Pin TO-5 New Jersey Semiconductor
192 2N4864 Trans GP BJT NPN 120V 2A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
193 2N5237 Trans GP BJT NPN 120V 10A 3-Pin TO-5 New Jersey Semiconductor
194 2N5400 0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE Continental Device India Limited
195 2N5400 Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box New Jersey Semiconductor
196 2N540A Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box New Jersey Semiconductor
197 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
198 2N5630 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
199 2N5630 Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
200 2N5633 Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
201 2N5672 Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
202 2N5672MP Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
203 2N5672S Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
204 2N5680 10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
205 2N5680 Trans GP BJT PNP 120V 1A 3-Pin TO-39 New Jersey Semiconductor
206 2N5682 10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
207 2N5682 Trans GP BJT NPN 120V 1A 3-Pin TO-39 New Jersey Semiconductor
208 2N5951 1.5 Watt hermetically sealed glass silicon zener diode 120V Motorola
209 2N6030 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
210 2N6030 Trans GP BJT PNP 120V 16A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor


Datasheets found :: 477
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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