| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SA1358 |
Trans GP BJT PNP 120V 1A 3-Pin TO-126IS |
New Jersey Semiconductor |
| 242 |
2SA1908 |
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PF |
New Jersey Semiconductor |
| 243 |
2SA1940 |
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 244 |
2SA970 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 245 |
2SA971 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 246 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 247 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 248 |
2SC1940 |
Trans GP BJT NPN 120V 0.05A 3-Pin SP-8 |
New Jersey Semiconductor |
| 249 |
2SC2245 |
Trans GP BJT NPN 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 250 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
| 251 |
2SC4849 |
HIGH-VOLTAGE SWITCHING TRANSISTOR (POWER SUPPLY) ( 120V/ 7A) |
ROHM |
| 252 |
2SC5147 |
HIGH-VOLTAGE SWITCHING TRANSISTOR (POWER SUPPLY) ( 120V/ 7A) |
ROHM |
| 253 |
2SCR372P5 |
NPN 120V 700mA Medium Power Driver |
ROHM |
| 254 |
2SCR372P5T100 |
NPN 120V 700mA Medium Power Driver |
ROHM |
| 255 |
2SCR375P5 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
| 256 |
2SCR375P5T100 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
| 257 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 258 |
2SD1953 |
NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications |
SANYO |
| 259 |
3.0SMCJ120 |
3000W voltage supressor, 120V |
MEI |
| 260 |
3.0SMCJ120A |
3000W voltage supressor, 120V |
MEI |
| 261 |
30KP120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 262 |
30KP120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 263 |
30KP120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 264 |
30KP120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 265 |
30KPA120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 266 |
30KPA120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 267 |
30KPA120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 268 |
30KPA120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 269 |
3VR120 |
3 Watt Epoxy Silicon Zener Diode 120V |
Transitron Electronic |
| 270 |
4DZ120 |
4W 120V Voltage Regulator Diode |
IPRS Baneasa |
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