| No. |
Part Name |
Description |
Manufacturer |
| 181 |
E159 |
Red T-1 3/4 flashing LED. Lens diffused. Luminous intensity at 9.0VDC: 20mcd(min), 80mcd(max). Forward voltage : 3.5VDC(min), 12.0VDC(typ), 13.0VDC(max). |
Gilway Technical Lamp |
| 182 |
E160 |
Yellow T-1 3/4 flashing LED. Lens diffused. Luminous intensity at 9.0VDC: 5mcd(min), 32mcd(max). Forward voltage : 3.5VDC(min), 12.0VDC(typ), 13.0VDC(max). |
Gilway Technical Lamp |
| 183 |
E161 |
Green T-1 3/4 flashing LED. Lens diffused. Luminous intensity at 9.0VDC: 5mcd(min), 32mcd(max). Forward voltage : 3.5VDC(min), 12.0VDC(typ), 13.0VDC(max). |
Gilway Technical Lamp |
| 184 |
FDD13AN06_F085 |
N-Channel PowerTrench� MOSFET, 60V, 50A, 13.5m? |
Fairchild Semiconductor |
| 185 |
FDP13AN06A |
N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m |
Fairchild Semiconductor |
| 186 |
HMC364 |
GaAs HBT MMIC DIVIDE-BY-2, DC - 13.0 GHz |
Hittite Microwave Corporation |
| 187 |
HMC364G8 |
SMT GaAs HBT MMIC DIVIDE-BY-2, DC - 13.0 GHz |
Hittite Microwave Corporation |
| 188 |
HMC365 |
GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz |
Hittite Microwave Corporation |
| 189 |
HMC365G8 |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz |
Hittite Microwave Corporation |
| 190 |
HMC365S8G |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz |
Hittite Microwave Corporation |
| 191 |
HMC401QS16G |
Ku-BAND MMIC VCO with DIVIDE-BY-8, 13.2 - 13.5 GHz |
Hittite Microwave Corporation |
| 192 |
HMC401QS16G |
Ku-BAND MMIC VCO with DIVIDE-BY-8, 13.2 - 13.5 GHz |
Hittite Microwave Corporation |
| 193 |
HMC441LP3 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz |
Hittite Microwave Corporation |
| 194 |
IPB14N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, D2PAK, RDSon = 13.6mOhm, 30A, LL |
Infineon |
| 195 |
IPD13N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, D-PAK, RDSon = 13.0mOhm, 30A, LL |
Infineon |
| 196 |
IPD14N03L |
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 13.5mOhm, 30A, LL |
Infineon |
| 197 |
IPF13N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, Reverse D-PAK, RDSon = 13.3mOhm, 30A, LL |
Infineon |
| 198 |
IPP14N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO220, RDSon = 13.9mOhm, 30A, LL |
Infineon |
| 199 |
IPU13N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 13.0mOhm, 30A, LL |
Infineon |
| 200 |
ISL70003SEH |
Radiation Hardened and SEE Hardened 3V to 13.2V, 6A Buck Regulator |
Intersil |
| 201 |
JPS250PS15 |
Switching power supply. Max. power 250 W. Output voltage 15 V. Output current: 17.0 A (with 18 CFM); 13.5 A (convection cooled). |
International Power Sources |
| 202 |
JPS250PS15C |
Switching power supply. Max. power 250 W. Output voltage 15 V. Output current: 17.0 A (with 18 CFM); 13.5 A (convection cooled). |
International Power Sources |
| 203 |
KZY08 |
Zener diode for stabilisation 13.5V |
Tesla Elektronicke |
| 204 |
LA4625 |
2-Channel 13.5 W BTL Class AB Audio Power Amplifier IC |
ON Semiconductor |
| 205 |
LA4625 |
Two-Channel 13.5 W BTL Audio Power Amplifier |
SANYO |
| 206 |
LM2438 |
Monolithic Triple 13.5 ns CRT Driver |
National Semiconductor |
| 207 |
LRI64 |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
| 208 |
LRI64-A1S |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
| 209 |
LRI64-A1S/1GE |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
| 210 |
LRI64-A1T |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
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