No. |
Part Name |
Description |
Manufacturer |
211 |
LRI64-A1T/1GE |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
212 |
LRI64-A6S/1GE |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
213 |
LRI64-A6S2U |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
214 |
LRI64-A7T |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
215 |
LRI64-SBN18 |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
216 |
LRI64-SBN18/1GE |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
217 |
LRI64-W4 |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
218 |
LRI64-W4/1GE |
Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO 15693 Standard Compliant |
ST Microelectronics |
219 |
M35101 |
Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM |
SGS Thomson Microelectronics |
220 |
M35101-C20 |
Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM |
ST Microelectronics |
221 |
M35101-C30 |
Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM |
ST Microelectronics |
222 |
M35101-S4 |
Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM |
ST Microelectronics |
223 |
M35101-W4 |
Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM |
ST Microelectronics |
224 |
M35102 |
Contactless Memory with 64-bit Unique Serial ID 13.56 MHz, 2048-bit High Endurance EEPROM |
SGS Thomson Microelectronics |
225 |
M35102-C20 |
Contactless Memory Chip with 64-bit Unique Serial ID 13.56 MHz, 2048-bit High Endurance EEPROM |
ST Microelectronics |
226 |
M35102-C30 |
Contactless Memory Chip with 64-bit Unique Serial ID 13.56 MHz, 2048-bit High Endurance EEPROM |
ST Microelectronics |
227 |
M35102-S4 |
Contactless Memory Chip with 64-bit Unique Serial ID 13.56 MHz, 2048-bit High Endurance EEPROM |
ST Microelectronics |
228 |
M35102-W4 |
Contactless Memory Chip with 64-bit Unique Serial ID 13.56 MHz, 2048-bit High Endurance EEPROM |
ST Microelectronics |
229 |
M57788HR |
MITSUBISHI RF POWER MODULE 450-470MHz, 13.5V, 47W, FM MOBILE RADIO |
Mitsubishi Electric Corporation |
230 |
M57788L |
MITSUBISHI RF POWER MODULE 400-430MHz, 13.5V, 40W, FM MOBILE RADIO |
Mitsubishi Electric Corporation |
231 |
M57788LR |
MITSUBISHI RF POWER MODULE 400-430MHz, 13.5V, 47W, FM MOBILE RADIO |
Mitsubishi Electric Corporation |
232 |
M67775 |
RF POWER MODULE 1465-1477MHz, 13.5V, 7.5W, FM MOBILE RADIO |
Mitsubishi Electric Corporation |
233 |
MA2130-A |
Si planar. Stabilized power supply. Nom zener voltage 13.0 V. |
Panasonic |
234 |
MA2130-B |
Si planar. Stabilized power supply. Nom zener voltage 13.0 V. |
Panasonic |
235 |
MAX1954AEUB |
3.0 V to 13.2 V, low-cost, current-mode PWM buck controller with foldback current limit |
MAXIM - Dallas Semiconductor |
236 |
MAX1954AEVKIT |
10.8 to 13.2 V, evaluation kit |
MAXIM - Dallas Semiconductor |
237 |
MAX4074BBESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 12.5V/V, noniverting gain 13.5V/V, -3dB BW 64kHZ. |
MAXIM - Dallas Semiconductor |
238 |
MAX4074BBEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 12.5V/V, noniverting gain 13.5V/V, -3dB BW 64kHZ. |
MAXIM - Dallas Semiconductor |
239 |
MAX4075BBESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 12.5V/V, noninverting gain 13.5V/V, -3dB BW 64kHz. |
MAXIM - Dallas Semiconductor |
240 |
MAX4075BBEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 12.5V/V, noninverting gain 13.5V/V, -3dB BW 64kHZ. |
MAXIM - Dallas Semiconductor |
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