| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3799 |
Trans GP BJT PNP 60V 0.05A 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 182 |
2N3810HR |
Hi-Rel PNP Dual Matched Bipolar Transistor 60V - 0.05A |
ST Microelectronics |
| 183 |
2N3810HRG |
Hi-Rel PNP Dual Matched Bipolar Transistor 60V - 0.05A |
ST Microelectronics |
| 184 |
2N3810HRT |
Hi-Rel PNP Dual Matched Bipolar Transistor 60V - 0.05A |
ST Microelectronics |
| 185 |
2N3811 |
Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 |
New Jersey Semiconductor |
| 186 |
2N3816 |
Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 |
New Jersey Semiconductor |
| 187 |
2N3817A |
Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 |
New Jersey Semiconductor |
| 188 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
| 189 |
2N3859A |
Trans GP BJT NPN 60V 0.5A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 190 |
2N3868 |
Trans GP BJT PNP 60V 3A 3-Pin TO-5 |
New Jersey Semiconductor |
| 191 |
2N3868S |
Trans GP BJT PNP 60V 3A 3-Pin TO-39 |
New Jersey Semiconductor |
| 192 |
2N3868V |
Trans GP BJT PNP 60V 3A 3-Pin TO-39 |
New Jersey Semiconductor |
| 193 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 194 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 195 |
2N3924 |
Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 196 |
2N3926 |
Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 197 |
2N3962 |
Trans GP BJT PNP 60V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 198 |
2N3965 |
Trans GP BJT PNP 60V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 199 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 200 |
2N4030 |
Trans GP BJT PNP 60V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 201 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 202 |
2N4032 |
Trans GP BJT PNP 60V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 203 |
2N4100 |
Trans GP BJT NPN 60V 0.05A 3-Pin TO-18 |
New Jersey Semiconductor |
| 204 |
2N4115 |
Trans GP BJT NPN 60V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 205 |
2N4232 |
Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 206 |
2N4232A |
Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 207 |
2N4235 |
6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 208 |
2N4235 |
Trans GP BJT NPN 60V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 209 |
2N4238 |
6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. |
Continental Device India Limited |
| 210 |
2N4238 |
Trans GP BJT NPN 60V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
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