No. |
Part Name |
Description |
Manufacturer |
301 |
2N6122 |
Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
302 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
303 |
2N6125 |
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
304 |
2N6282 |
Trans Darlington NPN 60V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
305 |
2N6285 |
Trans Darlington PNP 60V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
306 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
307 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
308 |
2N6294 |
Trans Darlington NPN 60V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
309 |
2N6296 |
Trans Darlington PNP 60V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
310 |
2N6298 |
Trans Darlington PNP 60V 8A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
311 |
2N6300 |
Trans Darlington NPN 60V 8A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
312 |
2N6373 |
Trans GP BJT NPN 60V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
313 |
2N6384 |
Trans Darlington NPN 60V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
314 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
315 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
316 |
2N6471 |
Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
317 |
2N6487 |
75.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
318 |
2N6487 |
Trans GP BJT NPN 60V 15A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
319 |
2N6490 |
75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
320 |
2N6490 |
Trans GP BJT PNP 60V 15A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
321 |
2N6551 |
Trans GP BJT NPN 60V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
322 |
2N6554 |
Trans GP BJT PNP 60V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
323 |
2N6576 |
Trans Darlington Power Transistor 60V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
324 |
2N6649 |
Trans Darlington PNP 60V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
325 |
2N6660 |
Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD |
New Jersey Semiconductor |
326 |
2N6667 |
Trans Darlington PNP 60V 10A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
327 |
2N6667 |
Power 8A 60V Darlington PNP |
ON Semiconductor |
328 |
2N6709 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
329 |
2N6716 |
0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE |
Continental Device India Limited |
330 |
2N6716 |
Trans GP BJT NPN 60V 2A 3-Pin(3+Tab) TO-237 Tape and Box |
New Jersey Semiconductor |
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