| No. |
Part Name |
Description |
Manufacturer |
| 391 |
2SA733Q |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 392 |
2SA733R |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 393 |
2SB1022 |
7A; 30W; V(ceo): 60V; PNP darlington transistor |
TOSHIBA |
| 394 |
2SB1510 |
PNP Epitaxial Planar Silicon Transistors 60V/3A Driver Applications |
SANYO |
| 395 |
2SB1569 |
Trans GP BJT PNP 60V 2A 4-Pin(3+Tab) MPT |
New Jersey Semiconductor |
| 396 |
2SB1642 |
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220NIS |
New Jersey Semiconductor |
| 397 |
2SB1669 |
Power transistor PNP 60V/3A MP-25 |
NEC |
| 398 |
2SB1669-S |
Power transistor PNP 60V/3A MP-25 |
NEC |
| 399 |
2SB1669-Z |
Power transistor PNP 60V/3A MP-25 |
NEC |
| 400 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 401 |
2SC3144 |
NPN Epitaxial Planar Silicon Darlington Transistors 60V/3A for High-Speed Drivers Applications |
SANYO |
| 402 |
2SC3145 |
NPN Epitaxial Planar Silicon Darlington Transistors 60V/5A for High-Speed Drivers Applications |
SANYO |
| 403 |
2SC3243 |
900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 |
Isahaya Electronics Corporation |
| 404 |
2SC3253 |
NPN Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching Applications |
SANYO |
| 405 |
2SC3254 |
NPN Epitaxial Planar Silicon Transistors 60V/7A High-Speed Switching Applications |
SANYO |
| 406 |
2SC3255 |
NPN Epitaxial Planar Silicon Transistors 60V/10A High-Speed Switching Applications |
SANYO |
| 407 |
2SC3256 |
NPN Epitaxial Planar Silicon Transistors 60V/15A High-Speed Switching Applications |
SANYO |
| 408 |
2SC3746 |
NPN Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching Applications |
SANYO |
| 409 |
2SC3747 |
NPN Epitaxial Planar Silicon Transistors 60V/7A High-Speed Switching Applications |
SANYO |
| 410 |
2SC3748 |
NPN Epitaxial Planar Silicon Transistors 60V/10A High-Speed Switching Applications |
SANYO |
| 411 |
2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. |
Isahaya Electronics Corporation |
| 412 |
2SC5611 |
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications |
SANYO |
| 413 |
2SC6097 |
Bipolar Transistor, 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
| 414 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 415 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 416 |
2SD1585 |
Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220 Isolated |
New Jersey Semiconductor |
| 417 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 418 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 419 |
2SD2284 |
NPN Epitaxial Planar Silicon Transistors 60V/3A Driver Applications |
SANYO |
| 420 |
2SD916 |
Trans Darlington NPN 60V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
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