| No. |
Part Name |
Description |
Manufacturer |
| 451 |
2SK1257 |
V(dss): 60V; V(gss): +-20V; silicon N-channel power F-MOS FET. For DC-DC converter, no contact relay, solenoid drive, motor drive |
Panasonic |
| 452 |
2SK1259 |
V(dss): 60V; V(gss): +-20V; silicon N-channel power F-MOS FET. For DC-DC converter, no contact relay, solenoid drive, motor drive |
Panasonic |
| 453 |
2SK1297 |
V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching |
Hitachi Semiconductor |
| 454 |
2SK3670 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 455 |
2SK3703 |
N-Channel Power MOSFET, 60V, 30A, 26mOhm, TO-220F-3SG |
ON Semiconductor |
| 456 |
2SK3940 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 457 |
2SK4018 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 458 |
2SK4019 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 459 |
2SK4066 |
N-Channel Power MOSFET, 60V, 100A, 4.7mOhm, TO-262-3L/TO-263-2L |
ON Semiconductor |
| 460 |
30KP60 |
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 461 |
30KP60A |
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 462 |
30KP60C |
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 463 |
30KP60CA |
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 464 |
30KPA60 |
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 465 |
30KPA60A |
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 466 |
30KPA60C |
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 467 |
30KPA60CA |
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 468 |
30SCLJQ060 |
30A 60V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package |
International Rectifier |
| 469 |
30SCLJQ060SCS |
30A 60V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package |
International Rectifier |
| 470 |
30SLJQ060SCS |
30A 60V Hi-Rel Schottky Discrete Diode in a SMD-0.5 package |
International Rectifier |
| 471 |
30WQ06F |
Diode Schottky 60V 3.3A 3-Pin(2+Tab) DPAK |
New Jersey Semiconductor |
| 472 |
30WQ06FN |
Diode Schottky 60V 3.5A Automotive 3-Pin(2+Tab) DPAK Tube |
New Jersey Semiconductor |
| 473 |
30WQ06FTR |
Diode Schottky 60V 3.3A 3-Pin(2+Tab) DPAK |
New Jersey Semiconductor |
| 474 |
31DQ06 |
Diode Schottky 60V 3.3A 2-Pin DO-201AD Box |
New Jersey Semiconductor |
| 475 |
35SCGJQ060 |
35A 60V Hi-Rel Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
| 476 |
35SCGQ060 |
35A 60V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
| 477 |
35SCGQ060SCS |
35A 60V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
| 478 |
35SGQ060SCS |
35A 60V Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
| 479 |
3VR60 |
3 Watt Epoxy Silicon Zener Diode 60V |
Transitron Electronic |
| 480 |
40318 |
Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
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