| No. |
Part Name |
Description |
Manufacturer |
| 181 |
MAX17135 |
Multi-Output DC-DC Power Supply with VCOM Amplifier and Temperature Sensor for E-Paper Applications |
MAXIM - Dallas Semiconductor |
| 182 |
MAX17135AETJ+T |
Multi-Output DC-DC Power Supply with VCOM Amplifier and Temperature Sensor for E-Paper Applications |
MAXIM - Dallas Semiconductor |
| 183 |
MAX17135ETJ+ |
Multi-Output DC-DC Power Supply with VCOM Amplifier and Temperature Sensor for E-Paper Applications |
MAXIM - Dallas Semiconductor |
| 184 |
MAX17135ETJ+T |
Multi-Output DC-DC Power Supply with VCOM Amplifier and Temperature Sensor for E-Paper Applications |
MAXIM - Dallas Semiconductor |
| 185 |
MAX17135EVCMAXQU# |
Multi-Output DC-DC Power Supply with VCOM Amplifier and Temperature Sensor for E-Paper Applications |
MAXIM - Dallas Semiconductor |
| 186 |
MF1090S-1 |
FOR E-GSM MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 187 |
MF1090V-3 |
FOR E-GSM MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 188 |
MF1157V-2 |
FOR E-GSM MOBILE TELEPHONE, Tx |
Mitsubishi Electric Corporation |
| 189 |
MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 190 |
MMFT3055E-D |
Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount |
ON Semiconductor |
| 191 |
MPS2369A |
Trans GP BJT NPN 15V 0.5A 3-Pin E-Line |
New Jersey Semiconductor |
| 192 |
MTA1N60E |
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor |
Motorola |
| 193 |
MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 194 |
MTB10N60E7 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 195 |
MTB10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 196 |
MTB10N60E7T4 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 197 |
MTB16N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount |
ON Semiconductor |
| 198 |
MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 199 |
MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 200 |
MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 201 |
MTB3N100E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 202 |
MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 203 |
MTB3N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 204 |
MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 205 |
MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 206 |
MTB6N60E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 207 |
MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 208 |
MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 209 |
MTD10N10EL-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 210 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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