No. |
Part Name |
Description |
Manufacturer |
181 |
1N4446 |
Silicon signal diode - high speed switching |
SESCOSEM |
182 |
1N4446 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
183 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
184 |
1N4447 |
Silicon whiskerless diode, high speed diode for computer and other applications |
Mullard |
185 |
1N4447 |
Silicon signal diode - high speed switching |
SESCOSEM |
186 |
1N4447 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
187 |
1N4448 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
188 |
1N4448 |
Silicon whiskerless diode, high speed diode for computer and other applications |
Mullard |
189 |
1N4448 |
Ultra High Speed Silicon Diode |
Philips |
190 |
1N4448 |
Silicon signal diode - high speed switching |
SESCOSEM |
191 |
1N4448 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
192 |
1N4449 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
193 |
1N4449 |
Silicon signal diode - high speed switching |
SESCOSEM |
194 |
1N4449 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
195 |
1N4454 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
196 |
1N4454 |
Silicon signal diode - high speed switching |
SESCOSEM |
197 |
1N4531 |
Silicon signal diode - high speed switching |
SESCOSEM |
198 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
199 |
1N461A |
25 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
200 |
1N461A |
General purpose high conductance diode. Working inverse voltage 25V. |
Fairchild Semiconductor |
201 |
1N462A |
60 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
202 |
1N462A |
General purpose high conductance diode. Working inverse voltage 60V. |
Fairchild Semiconductor |
203 |
1N463A |
175 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
204 |
1N463A |
General purpose high conductance diode. Working inverse voltage 175V. |
Fairchild Semiconductor |
205 |
1N464A |
125 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
206 |
1N4885 |
Silicon varactor diode for use in high efficiency multiplier circuits |
Mullard |
207 |
1N5221 |
ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
208 |
1N5221B-LCC3 |
ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
209 |
1N5222 |
ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
210 |
1N5222B-LCC3 |
ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
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