| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1H6 |
1.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 92 |
1H6 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 93 |
1H6-T3 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 94 |
1H6-TB |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 95 |
1H7 |
TECHINCAL SPECIFICATIONS OF MINIATURE HIGH EFFICIENCY RECTIFIER |
DC Components |
| 96 |
1H7 |
1.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 97 |
1H7 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 98 |
1H7-T3 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 99 |
1H7-TB |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 100 |
1H8 |
TECHINCAL SPECIFICATIONS OF MINIATURE HIGH EFFICIENCY RECTIFIER |
DC Components |
| 101 |
1H8 |
1.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 102 |
1H8 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 103 |
1MBI800PN-180 |
Low loss high speed switching IGBT Modules |
Fuji Electric |
| 104 |
1N3062 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 105 |
1N3063 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 106 |
1N3064 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 107 |
1N3069 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 108 |
1N3070 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 109 |
1N3071 |
Silicon signal diode - high voltage switching |
SESCOSEM |
| 110 |
1N3282 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 700V |
Motorola |
| 111 |
1N3283 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1050V |
Motorola |
| 112 |
1N3284 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1400V |
Motorola |
| 113 |
1N3285 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1750V |
Motorola |
| 114 |
1N3286 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 2100V |
Motorola |
| 115 |
1N3496 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 116 |
1N3497 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 117 |
1N3498 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 118 |
1N3499 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 119 |
1N3600 |
Silicon signal diode - high current switching |
SESCOSEM |
| 120 |
1N3604 |
Silicon signal diode - high speed switching |
SESCOSEM |
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