| No. |
Part Name |
Description |
Manufacturer |
| 181 |
OPA4180ID |
0.1 uV/C Drift, Quad, Low Noise, Rail-to-Rail, 36V Zero Drift Op Amp 14-SOIC -40 to 105 |
Texas Instruments |
| 182 |
OPA4180IDR |
0.1 uV/C Drift, Quad, Low Noise, Rail-to-Rail, 36V Zero Drift Op Amp 14-SOIC -40 to 105 |
Texas Instruments |
| 183 |
OPA4180IPW |
0.1 uV/C Drift, Quad, Low Noise, Rail-to-Rail, 36V Zero Drift Op Amp 14-TSSOP -40 to 105 |
Texas Instruments |
| 184 |
OPA4180IPWR |
0.1 uV/C Drift, Quad, Low Noise, Rail-to-Rail, 36V Zero Drift Op Amp 14-TSSOP -40 to 105 |
Texas Instruments |
| 185 |
PBHV2160Z |
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor |
Nexperia |
| 186 |
PBHV3160Z |
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor |
Nexperia |
| 187 |
PIC18F1220 |
This microcontroller has nanoWatt Technology, which features six enhanced power-managed "software controlled" modes, power consumption as low as 0.1 microamps in standby mode and a wide operating voltage range from 2- to 5.5-volts which ma |
Microchip |
| 188 |
PIC18F1320 |
This microcontroller has nanoWatt Technology, which features six enhanced power-managed "software controlled" modes, power consumption as low as 0.1 microamps in standby mode and a wide operating voltage range from 2- to 5.5-volts which ma |
Microchip |
| 189 |
PMEG3001EEF |
30 V, 0.1 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 190 |
PS710A-1A |
6-PIN DIP, 0.1 ohm LOW ON-STATE RESISTANCE 1.8 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET |
NEC |
| 191 |
PS710AL-1A |
6-PIN DIP, 0.1 ohm LOW ON-STATE RESISTANCE 1.8 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET |
NEC |
| 192 |
PS710AL-1A-E3 |
6-PIN DIP, 0.1 ohm LOW ON-STATE RESISTANCE 1.8 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET |
NEC |
| 193 |
PS710AL-1A-E4 |
6-PIN DIP, 0.1 ohm LOW ON-STATE RESISTANCE 1.8 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET |
NEC |
| 194 |
RB420D |
40 Volts 0.1 Amp Surface Mount Schottky Barrier Diode |
Micro Commercial Components |
| 195 |
RB421D |
40 Volts 0.1 Amp Surface Mount Schottky Barrier Diode |
Micro Commercial Components |
| 196 |
SKY13358-388LF |
0.1 - 3.0 GHz SP5T Switch |
Skyworks Solutions |
| 197 |
SKY13397-388LF |
0.1 – 3.0 GHz DP5T Switch |
Skyworks Solutions |
| 198 |
SKY13434-002 |
0.1 - 6.0 GHz SP3T/SPDT Wire-Bondable GaAs Die |
Skyworks Solutions |
| 199 |
SKY13588-460LF |
0.1 to 6.0 GHz SP3T Switch |
Skyworks Solutions |
| 200 |
SKYA21002 |
0.1 to 3.0 GHz SP3T Switch |
Skyworks Solutions |
| 201 |
SKYA21013 |
0.1 to 6.0 GHz SPDT Switch |
Skyworks Solutions |
| 202 |
SKYA21029 |
0.1 to 3.8 GHz SP4T Antenna Switch |
Skyworks Solutions |
| 203 |
SKYA21062 |
0.1 to 6.0 GHz SP3T Switch |
Skyworks Solutions |
| 204 |
SKYA21070 |
0.1 to 6.0 GHz DPDT Switch |
Skyworks Solutions |
| 205 |
SMA3103 |
MMIC, Amplifier, 5V, 19mA, 0.1 to 3.3GHz, MCPH6 |
ON Semiconductor |
| 206 |
SMA3107 |
MMIC, Amplifier, 3V, 6mA, 0.1 to 2.8GHz, MCPH6 |
ON Semiconductor |
| 207 |
SMA3109 |
MMIC, Amplifier, 3V, 16mA, 0.1 to 3.6GHz, MCPH6 |
ON Semiconductor |
| 208 |
SPF-2086T |
0.1 GHz - 12 GHz low noise PHEMT GaAs FET |
Stanford Microdevices |
| 209 |
SPF-2086TK |
0.1 GHz - 4 GHz low noise PHEMT GaAs FET |
Stanford Microdevices |
| 210 |
STB32NM50N |
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
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