| No. |
Part Name |
Description |
Manufacturer |
| 211 |
STD10NF06L |
N-CHANNEL 60V 0.1 OHM 10A DPAK STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 212 |
STD10NF06L |
N-CHANNEL 60V 0.1 OHM 10A DPAK STRIPFET II POWER MOSFET |
ST Microelectronics |
| 213 |
STDID5B |
N-CHANNEL 55V - 0.1 OHM -12A TO-252 STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 214 |
STDID5B |
N-CHANNEL 55V - 0.1 OHM -12A TO-252 STRIPFET POWER MOSFET |
ST Microelectronics |
| 215 |
STF32NM50N |
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-220FP package |
ST Microelectronics |
| 216 |
STN2NF06L |
N-CHANNEL 60V - 0.1 OHM - 2A SOT-223 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 217 |
STP14NF06 |
N-CHANNEL 60V 0.1 OHM 14A TO-220 STRIPFET POWER MOSFET |
ST Microelectronics |
| 218 |
STP32NM50N |
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-220 package |
ST Microelectronics |
| 219 |
STQ2NF06L |
N-CHANNEL 60V - 0.1 OHM - 2A TO-92 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 220 |
STQ2NF06L-AP |
N-CHANNEL 60V - 0.1 OHM - 2A TO-92 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 221 |
STUB082 |
Working peak reverse voltage: 70.1 V, 1 mA, 400 W surface mount transient voltage suppressor |
EIC discrete Semiconductors |
| 222 |
STUB582 |
Working peak reverse voltage: 70.1 V, 1 mA, 400 W surface mount transient voltage suppressor |
EIC discrete Semiconductors |
| 223 |
STW32NM50N |
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-247 package |
ST Microelectronics |
| 224 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 225 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 226 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 227 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 228 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 229 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 230 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 231 |
TGA2216 |
0.1 - 3.0 GHz, 12 Watt GaN Power Amplifier |
Qorvo |
| 232 |
TGA2216-SM |
0.1 - 3.0 GHz, 10 Watt GaN Power Amplifier |
Qorvo |
| 233 |
TGA2976-SM |
0.1 - 3.0 GHz, 10 Watt GaN Power Amplifier |
Qorvo |
| 234 |
TGL2217 |
0.1 - 20 GHz, 10 Watt VPIN Limiter |
Qorvo |
| 235 |
TGL2217-SM |
0.1 - 20 GHz, 10 Watt VPIN Limiter |
Qorvo |
| 236 |
TGL2223 |
0.1 - 31 GHz Digital Step Attenuator, 5-Bit, 0.5 dB Steps, Die |
Qorvo |
| 237 |
TGL2223-SM |
0.1 - 31 GHz Digital Step Attenuator, 5-Bit, 0.5 dB Steps, Packaged |
Qorvo |
| 238 |
TGL2226 |
0.1 - 15 GHz Digital Step Attenuator, 6-Bit, 0.5 dB Steps, Die |
Qorvo |
| 239 |
TGL2226-SM |
0.1 - 15 GHz Digital Step Attenuator, 6-Bit, 0.5 dB Steps, Packaged |
Qorvo |
| 240 |
TGS2352-2 |
0.1 - 12 GHz High Power GaN SPDT Switch |
Qorvo |
| | | |
