No. |
Part Name |
Description |
Manufacturer |
181 |
15FMCJ300 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
182 |
15FMCJ400 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
183 |
15JGQ100 |
35A 100V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N7043CAT1 |
International Rectifier |
184 |
15KCD100 |
Transient suppressor CELLULAR DIE PACKAGE |
Microsemi |
185 |
15KCD200 |
Transient suppressor CELLULAR DIE PACKAGE |
Microsemi |
186 |
15KE100 |
TRANSIENT ABSORPTION ZENER |
Microsemi |
187 |
15KE100 |
GPP TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
188 |
15KE200 |
TRANSIENT ABSORPTION ZENER |
Microsemi |
189 |
15KE200 |
GPP TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
190 |
15KE300 |
TRANSIENT ABSORPTION ZENER |
Microsemi |
191 |
15KE300 |
GPP TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
192 |
15KE400 |
GPP TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
193 |
15KP100 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
194 |
15KP100 |
100V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
195 |
15KP100 |
Transient Voltage Suppressor |
Microsemi |
196 |
15KP100 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
197 |
15KP100 |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
198 |
15KP17 |
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
199 |
15KP17A |
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
200 |
15KP18 |
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
201 |
15KP18A |
Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
202 |
15KP18C |
Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
203 |
15KP20 |
Diode TVS Single Uni-Dir 20V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
204 |
15KP200 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
205 |
15KP200 |
200V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
206 |
15KP200 |
Transient Voltage Suppressor |
Microsemi |
207 |
15KP200 |
Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
208 |
15KP200 |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
209 |
15KP20A |
Diode TVS Single Uni-Dir 20V 15KW 2-Pin Case P600 |
New Jersey Semiconductor |
210 |
15KP66CA |
Diode TVS Single Bi-Dir 66V 144KW 2-Pin Case P600 |
New Jersey Semiconductor |
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