| No. |
Part Name |
Description |
Manufacturer |
| 271 |
1N2800 |
Diode 400V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 272 |
1N2900 |
Signal Diode |
Motorola |
| 273 |
1N300 |
Silicon Signal Diode |
Motorola |
| 274 |
1N3000 |
Zener Diodes - 10W |
America Semiconductor |
| 275 |
1N3000 |
10W Zener Diode |
Motorola |
| 276 |
1N3000 |
Zener Diode 62V 10W |
Motorola |
| 277 |
1N3000 |
Diode Zener Single 62V 20% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 278 |
1N3000 |
Diffused power zener diode 10W 62V |
Texas Instruments |
| 279 |
1N3000 |
10 Watt Silicon Zener Diode 62V |
Transitron Electronic |
| 280 |
1N3100 |
Zener Diode 1W |
Motorola |
| 281 |
1N3100 |
Diode Switching 200V 100A 2-Pin DO-8 |
New Jersey Semiconductor |
| 282 |
1N3200 |
Reference Diode |
Motorola |
| 283 |
1N3300 |
4-Layer Diode |
Motorola |
| 284 |
1N3400 |
Zener Diode 6.8V |
Motorola |
| 285 |
1N3500 |
Reference Diode |
Motorola |
| 286 |
1N3500 |
Voltage reference diode (temperature compensated) |
SESCOSEM |
| 287 |
1N3500 |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 288 |
1N3600 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 289 |
1N3600 |
SWITCHING DIODES |
Compensated Devices Incorporated |
| 290 |
1N3600 |
High conductance ultra fast diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 291 |
1N3600 |
Silicon Planar Diode |
ITT Semiconductors |
| 292 |
1N3600 |
Signal or Computer Diode |
Microsemi |
| 293 |
1N3600 |
Signal or Computer Diode |
Microsemi |
| 294 |
1N3600 |
Silicon Signal Diode |
Motorola |
| 295 |
1N3600 |
Diode Data |
National Semiconductor |
| 296 |
1N3600 |
Silicon signal diode - high current switching |
SESCOSEM |
| 297 |
1N3600 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 298 |
1N3700 |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 299 |
1N3700 |
Zener Diode 75V |
Motorola |
| 300 |
1N3800 |
1.5W Zener Diode low silhouette single-ended package |
Motorola |
| | | |
