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Datasheets for 00V,

Datasheets found :: 7299
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No. Part Name Description Manufacturer
181 1S105 Diffused silicon rectifier 750mA 600V, approved for military use, available under CV7026 to CV7030 Texas Instruments
182 1S107 Diffused silicon rectifier 750mA 800V, approved for military use, available under CV7026 to CV7030 Texas Instruments
183 1S109 Diffused silicon rectifier 750mA 1000V, approved for military use, available under CV7026 to CV7030 Texas Instruments
184 1S131 Diffused silicon diode 100V, color code brown-orange-brown Texas Instruments
185 1S132 Diffused silicon diode 200V, color code brown-orange-red Texas Instruments
186 1S134 Diffused silicon diode 400V, color code brown-orange-yellow Texas Instruments
187 1S136 Diffused silicon diode 600V, color code brown-orange-blue Texas Instruments
188 1S138 Diffused silicon diode 800V, color code brown-orange-gray Texas Instruments
189 1S1644R Silicon diffused junction rectifier 50A 300V, reverse polarity TOSHIBA
190 1S1646R Silicon diffused junction rectifier 100A 300V, reverse polarity TOSHIBA
191 1S3100A 1W Zener diode 100V, ±5% tolerance Texas Instruments
192 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
193 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
194 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
195 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
196 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
197 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
198 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
199 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
200 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
201 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
202 1S3200A 1W Zener diode 200V, ±5% tolerance Texas Instruments
203 1S410R Diffused silicon rectifier 3A 100V, reverse polarity Texas Instruments
204 1S411R Diffused silicon rectifier 3A 200V, reverse polarity Texas Instruments
205 1S413R Diffused silicon rectifier 3A 400V, reverse polarity Texas Instruments
206 1S415R Diffused silicon rectifier 3A 600V, reverse polarity Texas Instruments
207 1S417R Diffused silicon rectifier 3A 800V, reverse polarity Texas Instruments
208 1S419R Diffused silicon rectifier 3A 1000V, reverse polarity Texas Instruments
209 1S420R Diffused silicon rectifier 10A 100V, reverse polarity Texas Instruments
210 1S421R Diffused silicon rectifier 10A 200V, reverse polarity Texas Instruments


Datasheets found :: 7299
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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