| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1S423R |
Diffused silicon rectifier 10A 400V, reverse polarity |
Texas Instruments |
| 212 |
1S425R |
Diffused silicon rectifier 10A 600V, reverse polarity |
Texas Instruments |
| 213 |
1S427R |
Diffused silicon rectifier 10A 800V, reverse polarity |
Texas Instruments |
| 214 |
1S5100A |
Silicon power zener diode 10W 100V, ±5% tolerance |
Texas Instruments |
| 215 |
1S5100C |
Silicon power zener diode 10W 100V, double anode |
Texas Instruments |
| 216 |
1S5100R |
Silicon power zener diode 10W 100V, reverse polarity |
Texas Instruments |
| 217 |
1S6100A |
Silicon power zener diode 100V, ±5% tolerance |
Texas Instruments |
| 218 |
1S6100R |
Silicon power zener diode 100V, reverse polarity |
Texas Instruments |
| 219 |
1S6200A |
Silicon power zener diode 200V, ±5% tolerance |
Texas Instruments |
| 220 |
1S6200R |
Silicon power zener diode 200V, reverse polarity |
Texas Instruments |
| 221 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 222 |
2N3055 |
NPN power transistor, 100V, 15A |
SemeLAB |
| 223 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 224 |
2N3056 |
NPN power transistor, 100V, 15A |
SemeLAB |
| 225 |
2N4371 |
100V, 70A phase control single thyristor |
Powerex Power Semiconductors |
| 226 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
| 227 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 228 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
| 229 |
2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 230 |
2SB1344 |
POWER TRANSISTOR (-100V, -8A) |
ROHM |
| 231 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 232 |
2SD2025 |
POWER TRANSISTOR (-100V, -8A) |
ROHM |
| 233 |
2SK1280 |
N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W) |
Fuji Electric |
| 234 |
2SK3521-01MR |
N-channel power MOSFET, 600V, 6A |
Fuji Electric |
| 235 |
2SK3707 |
N-Channel Power MOSFET, 100V, 20A, 60mOhm, TO-220F-3SG |
ON Semiconductor |
| 236 |
2SK3745LS |
N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-220F-3FS |
ON Semiconductor |
| 237 |
2SK3746 |
N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-3P-3L |
ON Semiconductor |
| 238 |
2SK3747 |
N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-3PF-3L |
ON Semiconductor |
| 239 |
2SK3748 |
N-Channel Power MOSFET, 1500V, 4A, 7Ohm, TO-3PF-3L |
ON Semiconductor |
| 240 |
2SK4085LS |
N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FS |
ON Semiconductor |
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