No. |
Part Name |
Description |
Manufacturer |
181 |
HM514260LTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
182 |
HM514260LTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
183 |
HM514260LTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
184 |
HM514800LTT-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
185 |
HM514800LTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
186 |
HM514800LTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
187 |
HM6264BLFP-10LT |
64 k SRAM (8-kword x 8-bit) |
Hitachi Semiconductor |
188 |
HM628100LTTI-5SL |
Memory>Low Power SRAM |
Renesas |
189 |
HM62V16100LTI-4 |
Wide Temperature Range Version |
Hitachi Semiconductor |
190 |
HM62V16100LTI-4 |
Memory>Low Power SRAM |
Renesas |
191 |
HM62V16100LTI-4SL |
Wide Temperature Range Version |
Hitachi Semiconductor |
192 |
HM62V16100LTI-4SL |
Memory>Low Power SRAM |
Renesas |
193 |
HM62V16100LTI-5SL |
Wide Temperature Range Version |
Hitachi Semiconductor |
194 |
HM62V16100LTI-5SL |
Memory>Low Power SRAM |
Renesas |
195 |
HM62V16100LTI-XX |
Low Power SRAMs |
Hitachi Semiconductor |
196 |
HM62V8100LTTI-5 |
Memory>Low Power SRAM |
Renesas |
197 |
HM62V8100LTTI-5SL |
Memory>Low Power SRAM |
Renesas |
198 |
HM62V8100LTTI/LTTI-XXSL |
Low Power SRAMs |
Hitachi Semiconductor |
199 |
HY57V561620LT-8 |
4Banks x 4M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
200 |
HY57V561620LT-H |
4Banks x 4M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
201 |
HY57V561620LT-HP |
4Banks x 4M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
202 |
HY57V561620LT-P |
4Banks x 4M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
203 |
HY57V561620LT-S |
4Banks x 4M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
204 |
IR25750LTRPBF |
600V Current Sensing IC In Compact SOT-23 Package |
International Rectifier |
205 |
ISPL1048E-100LT |
High-Density Programmable Logic |
Lattice Semiconductor |
206 |
ISPL1048E-100LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
207 |
ISPL1048E-50LT |
High-Density Programmable Logic |
Lattice Semiconductor |
208 |
ISPL1048E-50LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
209 |
ISPL1048E-70LT |
High-Density Programmable Logic |
Lattice Semiconductor |
210 |
ISPL1048E-70LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
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