No. |
Part Name |
Description |
Manufacturer |
301 |
ISPLSI2192VE-180LT128 |
180 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
302 |
ISPLSI2192VL-100LT128 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
303 |
ISPLSI2192VL-150LT128 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
304 |
ISPLSI5128VE-100LT128 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
305 |
ISPLSI5128VE-100LT128I |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
306 |
ISPLSI5128VE-180LT128 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
307 |
ISPLSI5128VE-180LT128I |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
308 |
ISPLSI5128VE-80LT128 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
309 |
ISPLSI5128VE-80LT128I |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
310 |
ISPLSI5256VE-100LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
311 |
ISPLSI5256VE-100LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
312 |
ISPLSI5256VE-100LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
313 |
ISPLSI5256VE-100LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
314 |
ISPLSI5256VE-100LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
315 |
ISPLSI5256VE-100LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
316 |
ISPLSI5256VE-100LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
317 |
ISPLSI5256VE-100LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
318 |
ISPLSI5256VE-80LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
319 |
ISPLSI5256VE-80LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
320 |
ISPLSI5256VE-80LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
321 |
ISPLSI5256VE-80LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
322 |
KM684000LT |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
323 |
KM684000LT-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
324 |
KM684000LT-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
325 |
KM684000LT-5 |
512Kx8 bit CMOS static RAM, 55ns |
Samsung Electronic |
326 |
KM684000LT-5L |
512Kx8 bit CMOS static RAM, 55ns, low power |
Samsung Electronic |
327 |
KM684000LT-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
328 |
KM684000LT-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
329 |
KM684000LT-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
330 |
KM684000LT-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
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