No. |
Part Name |
Description |
Manufacturer |
331 |
KM684000LT-L |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
332 |
KM684000LTI-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
333 |
KM684000LTI-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
334 |
KM684000LTI-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
335 |
KM684000LTI-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
336 |
KM684000LTI-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
337 |
KM684000LTI-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
338 |
KSC900LTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
339 |
LMMUN2110LT3 |
Bias Resistor Transistors |
Leshan Radio Company |
340 |
LMUN2110LT1 |
Bias Resistor Transistors |
Leshan Radio Company |
341 |
LMUN21110LT1 |
Bias Resistor Transistors |
Leshan Radio Company |
342 |
LMUN2130LT1 |
Bias Resistor Transistors |
Leshan Radio Company |
343 |
LMUN2130LT3 |
Bias Resistor Transistors |
Leshan Radio Company |
344 |
LMX2330LTM |
2.5 GHz/510 MHz PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
345 |
LMX2330LTMX |
2.5 GHz/510 MHz PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
346 |
LP62S2048M-10LT |
256K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
347 |
LP62S2048M-70LT |
256K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
348 |
LP62S2048U-10LT |
256K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
349 |
LP62S2048U-70LT |
256K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
350 |
LP62S2048V-10LT |
256K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
351 |
LP62S2048V-70LT |
256K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
352 |
LP62S2048X-10LT |
256K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
353 |
LP62S2048X-70LT |
256K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
354 |
MAX16020LTER+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
355 |
MAX16020LTER+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
356 |
MAX16020LTES+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
357 |
MAX16020LTES+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
358 |
MAX16020LTET+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
359 |
MAX16020LTET+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
360 |
MAX6360LTUK-T |
Dual/Triple-Voltage ��P Supervisory Circuits |
MAXIM - Dallas Semiconductor |
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