| No. |
Part Name |
Description |
Manufacturer |
| 181 |
FSL9230R1 |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 182 |
FSL9230R3 |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 183 |
FSL9230R4 |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 184 |
IRF430 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 185 |
IRF610 |
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 186 |
IRF610 |
3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 187 |
IRF830 |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 188 |
IRF830 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 189 |
IRF9620 |
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
| 190 |
IRF9620 |
3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET |
Intersil |
| 191 |
IRFD210 |
0.6A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 192 |
IRFD9220 |
0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET |
Intersil |
| 193 |
IRFF210 |
2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 194 |
IRFF430 |
2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 195 |
IRFR9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
| 196 |
IRFR9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
Intersil |
| 197 |
IRFU9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
Intersil |
| 198 |
IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) |
International Rectifier |
| 199 |
IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) |
International Rectifier |
| 200 |
MAX1963EZT150-T |
1.50 V, low-input-voltage, 300 mA LDO regulator with RESET |
MAXIM - Dallas Semiconductor |
| 201 |
MAX1976EZT150-T |
1.50 V, low-input-voltage, 300 mA LDO regulator with RESET |
MAXIM - Dallas Semiconductor |
| 202 |
MJE13002 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE. |
Continental Device India Limited |
| 203 |
MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 1.500A Ic, 8 - 40 hFE. |
Continental Device India Limited |
| 204 |
NX8560SJ315-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. FC-UPC connector. |
NEC |
| 205 |
NX8560SJ315-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. SC-UPC connector. |
NEC |
| 206 |
NX8562LB654-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1565.49 nm. Frequency 191.50 THz. Anode ground. FC-PC connector. |
NEC |
| 207 |
NX8562LF654-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1565.49 nm. Frequency 191.50 THz. Anode floating. FC-PC connector. |
NEC |
| 208 |
NX8563LB654-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1565.49 nm. Frequency 191.50 THz. FC-PC connector. Anode ground. |
NEC |
| 209 |
NX8563LF654-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1565.49 nm. Frequency 191.50 THz. FC-PC connector. Anode floating. |
NEC |
| 210 |
NX8567SA315-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. FC-UPC connector. |
NEC |
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