No. |
Part Name |
Description |
Manufacturer |
211 |
NX8567SA315-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. SC-UPC connector. |
NEC |
212 |
NX8567SAM315-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. FC-UPC connector. |
NEC |
213 |
NX8567SAM315-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. SC-UPC connector. |
NEC |
214 |
NX8567SAS315-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. FC-UPC connector. |
NEC |
215 |
NX8567SAS315-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. SC-UPC connector. |
NEC |
216 |
NX8570SC315-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. FC-PC connector. |
NEC |
217 |
NX8570SC315-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. SC-PC connector. |
NEC |
218 |
NX8571SC315-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. FC-PC connector. |
NEC |
219 |
NX8571SC315-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. SC-PC connector. |
NEC |
220 |
PTB20074 |
14 watts, 1.477�1.501 GHz Cellular Radio RF Power Transistor |
Ericsson Microelectronics |
221 |
VTS2081 |
Process photodiode. Isc = 1.50 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
222 |
VTS3081 |
Process photodiode. Isc = 1.50 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
223 |
VTS3181 |
Process photodiode. Isc = 1.50 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
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