| No. |
Part Name |
Description |
Manufacturer |
| 181 |
5962P9960601TUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 182 |
5962P9960602QUA |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 3E4 (30krad(Si)). |
Aeroflex Circuit Technology |
| 183 |
5962P9960602QUC |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 3E4 (30krad(Si)). |
Aeroflex Circuit Technology |
| 184 |
5962P9960602QUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 3E4 (30krad(Si)). |
Aeroflex Circuit Technology |
| 185 |
5962P9960602TUA |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 3E4 (30krad(Si)). |
Aeroflex Circuit Technology |
| 186 |
5962P9960602TUC |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 3E4 (30krad(Si)). |
Aeroflex Circuit Technology |
| 187 |
5962P9960602TUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factoty option. Total dose 3E4 (30krad(Si)). |
Aeroflex Circuit Technology |
| 188 |
60HFU-100 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 189 |
60HFU-200 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 190 |
60HFU-300 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 191 |
60HFU-400 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 192 |
60HFU-500 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 193 |
60HFU-600 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 194 |
6MBP100NA060-01 |
IGBT-IPM |
Fuji Electric |
| 195 |
7MBI100N-060 |
IGBT(600V/100A) |
Fuji Electric |
| 196 |
7MBP100NA060-01 |
IGBT-IPM |
Fuji Electric |
| 197 |
A23L16162R-100 |
100ns 2M x 16/4M x 8bit CMOS MASK ROM |
AMIC Technology |
| 198 |
A290021TL-100 |
100ns 20mA 1uA 256K x 8bit CMOS 5.0V-only |
AMIC Technology |
| 199 |
A29002L-100 |
100ns 20mA 256K x 8bit CMOS 5.0V-only |
AMIC Technology |
| 200 |
A29002TL-100 |
100ns 20mA 1uA 256K x 8bit CMOS 5.0V-only |
AMIC Technology |
| 201 |
A29002TV-100 |
100ns 20mA 1uA 256K x 8bit CMOS 5.0V-only |
AMIC Technology |
| 202 |
AM29LV128MH103REI |
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns |
Advanced Micro Devices |
| 203 |
AM29LV128MH103RFI |
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns |
Advanced Micro Devices |
| 204 |
AM29LV128MH103RPCI |
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns |
Advanced Micro Devices |
| 205 |
AM29LV128ML103REI |
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns |
Advanced Micro Devices |
| 206 |
AM29LV128ML103RFI |
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns |
Advanced Micro Devices |
| 207 |
AM29LV128ML103RPCI |
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns |
Advanced Micro Devices |
| 208 |
AM29LV400B100EC |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
| 209 |
AM29LV400B100ECB |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
| 210 |
AM29LV400B100EE |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
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