No. |
Part Name |
Description |
Manufacturer |
241 |
AM29LV400T100FEB |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
242 |
AM29LV400T100FI |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
243 |
AM29LV400T100FIB |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
244 |
AM29LV400T100SC |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
245 |
AM29LV400T100SCB |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
246 |
AM29LV400T100SE |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
247 |
AM29LV400T100SEB |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
248 |
AM29LV400T100SI |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
249 |
AM29LV400T100SIB |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
250 |
AM29LV400T100WAC |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
251 |
AM29LV400T100WACB |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
252 |
AM29LV400T100WAE |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
253 |
AM29LV400T100WAEB |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
254 |
AM29LV400T100WAI |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
255 |
AM29LV400T100WAIB |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns |
Advanced Micro Devices |
256 |
BQ4011MA-100N |
32Kx8 Nonvolatile SRAM |
Texas Instruments |
257 |
BQ4011YMA-100N |
32Kx8 Nonvolatile SRAM |
Texas Instruments |
258 |
BS616LV8022AC |
70/100ns 20-45mA 2.4-5.5V very low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable |
Brilliance Semiconductor |
259 |
BS616LV8022AI |
70/100ns 20-45mA 2.4-5.5V very low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable |
Brilliance Semiconductor |
260 |
BS62LV2001DC-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
261 |
BS62LV2001DI-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
262 |
BS62LV2001SC-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
263 |
BS62LV2001SI-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
264 |
BS62LV2001STC-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
265 |
BS62LV2001STI-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
266 |
BS62LV2001TC-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
267 |
BS62LV2001TI-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
268 |
CDRH2D11-100NC |
POWER INDUCTORS |
Sumida |
269 |
CR-200-100NS |
Gaussian shaping amplifier |
etc |
270 |
CY37128VP100-100NTXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
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