| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1SMB120A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 120V. 600W peak power, 3.0W steady state. |
Motorola |
| 182 |
1SMC120 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 120V. 1500W peak power, 5.0W steady state. |
Motorola |
| 183 |
1SMC120A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 120V. 1500W peak power, 5.0W steady state. |
Motorola |
| 184 |
20DZ120 |
20W 120V Zener Diode |
IPRS Baneasa |
| 185 |
2DA1201Y |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
| 186 |
2DA1201Y-7 |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
| 187 |
2DA1201YQTC |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
| 188 |
2N1073B |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V |
Motorola |
| 189 |
2N1724A |
Trans GP BJT NPN 120V 5A 3-Pin TO-61 |
New Jersey Semiconductor |
| 190 |
2N2984 |
Trans GP BJT NPN 120V 3A 3-Pin TO-5 |
New Jersey Semiconductor |
| 191 |
2N2984A |
Trans GP BJT NPN 120V 3A 3-Pin TO-5 |
New Jersey Semiconductor |
| 192 |
2N2986 |
Trans GP BJT NPN 120V 3A 3-Pin TO-5 |
New Jersey Semiconductor |
| 193 |
2N3495 |
Trans GP BJT PNP 120V 3-Pin TO-39 |
New Jersey Semiconductor |
| 194 |
2N3497 |
0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 195 |
2N3497 |
Trans GP BJT NPN 120V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 196 |
2N4346 |
Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 197 |
2N4348 |
Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 198 |
2N4863 |
Trans GP BJT NPN 120V 2A 3-Pin TO-5 |
New Jersey Semiconductor |
| 199 |
2N4864 |
Trans GP BJT NPN 120V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 200 |
2N5237 |
Trans GP BJT NPN 120V 10A 3-Pin TO-5 |
New Jersey Semiconductor |
| 201 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
| 202 |
2N5400 |
Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 203 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 204 |
2N540A |
Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 205 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 206 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 207 |
2N5630 |
Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 208 |
2N5633 |
Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 209 |
2N5672 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 210 |
2N5672MP |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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