| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N6466 |
Trans GP BJT NPN 120V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 242 |
2N6468 |
Trans GP BJT PNP 120V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 243 |
2N6474 |
Trans GP BJT NPN 120V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 244 |
2N6474B |
Trans GP BJT NPN 120V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 245 |
2N6476 |
Trans GP BJT PNP 120V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 246 |
2N6537 |
Trans GP BJT NPN 120V 8A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 247 |
2N6578 |
Trans Darlington Power Transistor 120V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 248 |
2SA1072 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 249 |
2SA1073 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 250 |
2SA1077 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 251 |
2SA1078 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 252 |
2SA1079 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 253 |
2SA1358 |
Trans GP BJT PNP 120V 1A 3-Pin TO-126IS |
New Jersey Semiconductor |
| 254 |
2SA1908 |
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PF |
New Jersey Semiconductor |
| 255 |
2SA1940 |
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 256 |
2SA747 |
120V PNP silicon transistor |
Sanken |
| 257 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 258 |
2SA970 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 259 |
2SA971 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 260 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 261 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 262 |
2SB1340 |
Power Transistor (120V/ -6A) |
ROHM |
| 263 |
2SB631 |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 264 |
2SB631K |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 265 |
2SB688 |
POWER TRANSISTORS(8A,120V,80W) |
MOSPEC Semiconductor |
| 266 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 267 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 268 |
2SC1940 |
Trans GP BJT NPN 120V 0.05A 3-Pin SP-8 |
New Jersey Semiconductor |
| 269 |
2SC2245 |
Trans GP BJT NPN 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 270 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
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