| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SK1156 |
Transistors>Switching/MOSFETs |
Renesas |
| 182 |
2SK1566 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 183 |
2SK1566 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 184 |
2SK1566 |
Transistors>Switching/MOSFETs |
Renesas |
| 185 |
2SK1567 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 186 |
2SK1567 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 187 |
2SK1567 |
Transistors>Switching/MOSFETs |
Renesas |
| 188 |
2SK3156 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 189 |
2SK3156 |
Transistors>Switching/MOSFETs |
Renesas |
| 190 |
307C1569 |
Fluorescent Lighting |
Vishay |
| 191 |
30KP156A |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 192 |
30KP156CA |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 193 |
30KPA156 |
Diode TVS Single Uni-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 194 |
30KPA156 |
Diode TVS Single Uni-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 195 |
30KPA156A |
Diode TVS Single Uni-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 196 |
30KPA156A |
Diode TVS Single Uni-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 197 |
30KPA156Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 198 |
30KPA156C |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 199 |
30KPA156C |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 200 |
30KPA156CA |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 201 |
30KPA156CA |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 202 |
30KPA156CAe3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 203 |
30KPA156Ce3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 204 |
30KPA156e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 205 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 206 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 207 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 208 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 209 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 210 |
3N156 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| | | |
