| No. |
Part Name |
Description |
Manufacturer |
| 211 |
30KPA156C |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 212 |
30KPA156C |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 213 |
30KPA156CA |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 214 |
30KPA156CA |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 215 |
30KPA156CAe3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 216 |
30KPA156Ce3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 217 |
30KPA156e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 218 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 219 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 220 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 221 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 222 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 223 |
3N156 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 224 |
3N156 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
| 225 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 226 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 227 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 228 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 229 |
40953 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
| 230 |
40954 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
| 231 |
40955 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
| 232 |
489D156X003B4V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 233 |
489D156X010C13V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 234 |
489D156X016D20V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 235 |
489D156X020E26V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 236 |
489D156X025E32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 237 |
489D156X035M46V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 238 |
489D156X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 239 |
489D156X6R3B8V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 240 |
54156 |
Dual 1-OF-4 decoder/demultiplexer (With Open-Collector Outputs) |
Fairchild Semiconductor |
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