DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 611

Datasheets found :: 4638
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 2N6111 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
182 2N6111 Leaded Power Transistor General Purpose Central Semiconductor
183 2N6111 40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Continental Device India Limited
184 2N6111 PNP power transistor FERRANTI
185 2N6111 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
186 2N6111 POWER TRANSISTORS(7A,40W) MOSPEC Semiconductor
187 2N6111 7A complementary silicon plastic 65W power PNP transistor Motorola
188 2N6111 Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
189 2N6111 Power 7A 30V Discrete PNP ON Semiconductor
190 2N6111 Silicon PNP Power Transistors TO-220 package Savantic
191 2N6111 PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 SESCOSEM
192 2N6111 SILICON PNP SWITCHING TRANSISTORS SGS Thomson Microelectronics
193 2N6111 SILICON PNP SWITCHING TRANSISTORS SGS Thomson Microelectronics
194 2N6111 SILICON PNP SWITCHING TRANSISTORS ST Microelectronics
195 2N6114 Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
196 2N6115 Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
197 2N6116 Silicon programmable unijuction transistor. Motorola
198 2N6116 SEMICONDUCTOR DEVICE New Jersey Semiconductor
199 2N6117 Silicon programmable unijuction transistor. Motorola
200 2N6117 SEMICONDUCTOR DEVICE New Jersey Semiconductor
201 2N6118 Silicon programmable unijuction transistor. Motorola
202 2N6118 SEMICONDUCTOR DEVICE New Jersey Semiconductor
203 2N6288 40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 Continental Device India Limited
204 2SA1611 Silicon transistor NEC
205 2SA1611-T1 Silicon transistor NEC
206 2SA1611-T2 Silicon transistor NEC
207 2SC2611 Silicon NPN Triple Diffused Hitachi Semiconductor
208 2SC2611 Silicon NPN Transistor Hitachi Semiconductor
209 2SC2611 Silicon NPN Power Transistors TO-126 package Savantic
210 2SC3611 Power Device - Power Transistors - Others Panasonic


Datasheets found :: 4638
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



© 2024 - www Datasheet Catalog com