| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N6116 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 212 |
2N6116 |
PNPN Silicon Programmabe Unijunction Transistor |
Texas Instruments |
| 213 |
2N6117 |
Silicon programmable unijunction transistor 40V 250mW |
Motorola |
| 214 |
2N6117 |
Silicon programmable unijuction transistor. |
Motorola |
| 215 |
2N6117 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 216 |
2N6117 |
PNPN Silicon Programmabe Unijunction Transistor |
Texas Instruments |
| 217 |
2N6118 |
Silicon programmable unijunction transistor 40V 250mW |
Motorola |
| 218 |
2N6118 |
Silicon programmable unijuction transistor. |
Motorola |
| 219 |
2N6118 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 220 |
2N6118 |
PNPN Silicon Programmabe Unijunction Transistor |
Texas Instruments |
| 221 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
| 222 |
2SA1611 |
Silicon transistor |
NEC |
| 223 |
2SA1611-T1 |
Silicon transistor |
NEC |
| 224 |
2SA1611-T2 |
Silicon transistor |
NEC |
| 225 |
2SC2611 |
Silicon NPN Triple Diffused |
Hitachi Semiconductor |
| 226 |
2SC2611 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 227 |
2SC2611 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 228 |
2SC3611 |
Power Device - Power Transistors - Others |
Panasonic |
| 229 |
2SC5611 |
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications |
SANYO |
| 230 |
2SD1611 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 231 |
2SD2611 |
Power Transistor |
ROHM |
| 232 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 233 |
2SK2611 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) DC .DC Converter, Relay Drive and Motor Drive Applications |
TOSHIBA |
| 234 |
2SK3611 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 235 |
2SK3611-01MR |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 236 |
2SK611 |
MOS FIELD EFFECT POWER TRANSISTOR |
NEC |
| 237 |
40611 |
Silicon NPN Transistor for audio-frequency linear-amplifier applications |
RCA Solid State |
| 238 |
40611L |
Silicon NPN Transistor for audio-frequency linear-amplifier applications 1½-inch leads (TO-5 package) |
RCA Solid State |
| 239 |
40611S |
Silicon NPN Transistor for audio-frequency linear-amplifier applications ½-inch leads (TO-39 package) |
RCA Solid State |
| 240 |
46110 |
10 W, 28 V, 1000 MHz, UHF emitter transistor |
Acrian |
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