| No. |
Part Name |
Description |
Manufacturer |
| 181 |
LTC6930IMS8-8.00#PBF |
32.768kHz to 8.192MHz Precision µPower Oscillators |
Linear Technology |
| 182 |
LTC6930IMS8-8.00#TRPBF |
32.768kHz to 8.192MHz Precision µPower Oscillators |
Linear Technology |
| 183 |
LTC6930MPMS8-8.00#PBF |
32.768kHz to 8.192MHz Precision µPower Oscillators |
Linear Technology |
| 184 |
LTC6930MPMS8-8.00#TRPBF |
32.768kHz to 8.192MHz Precision µPower Oscillators |
Linear Technology |
| 185 |
MJE13006 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 8.000A Ic, 8 - 60 hFE. |
Continental Device India Limited |
| 186 |
MJE13007 |
80.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 5 - 30 hFE. |
Continental Device India Limited |
| 187 |
MJE15028 |
50.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 188 |
MJE15029 |
50.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 189 |
MJE15030 |
50.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 190 |
MJE15031 |
50.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 191 |
MJE15032 |
50.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 8.000A Ic, 50 - hFE |
Continental Device India Limited |
| 192 |
MJE15033 |
50.000W General Purpose PNP Plastic Leaded Transistor. 250V Vceo, 8.000A Ic, 50 - hFE |
Continental Device India Limited |
| 193 |
NX8562LB946-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1594.64 nm. Frequency 188.00 THz. Anode ground. FC-PC connector. |
NEC |
| 194 |
NX8562LF946-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1594.64 nm. Frequency 188.00 THz. Anode floating. FC-PC connector. |
NEC |
| 195 |
NX8563LB946-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1594.64 nm. Frequency 188.00 THz. FC-PC connector. Anode ground. |
NEC |
| 196 |
NX8563LF946-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1594.64 nm. Frequency 188.00 THz. FC-PC connector. Anode floating. |
NEC |
| 197 |
P4KE150A |
128.00V; 400W transient voltage suppressor |
Diodes |
| 198 |
P4KE150A |
128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 199 |
P4KE150A-T3 |
Reverse stand-off voltage: 128.00V transient voltage suppressor |
Won-Top Electronics |
| 200 |
P4KE150A-TB |
Reverse stand-off voltage: 128.00V transient voltage suppressor |
Won-Top Electronics |
| 201 |
P4KE150AC |
128.00V; 400W transient voltage suppressor |
Diodes |
| 202 |
P4KE150C |
128.00V; 400W transient voltage suppressor |
Diodes |
| 203 |
P4KE150CA |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 128.00 V. Test current IT = 1 mA. |
Bytes |
| 204 |
P4KE150CA-T3 |
Reverse stand-off voltage: 128.00V transient voltage suppressor |
Won-Top Electronics |
| 205 |
P4KE150CA-TB |
Reverse stand-off voltage: 128.00V transient voltage suppressor |
Won-Top Electronics |
| 206 |
P4KE170 |
138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 207 |
P4KE170-T3 |
Reverse stand-off voltage: 138.00V transient voltage suppressor |
Won-Top Electronics |
| 208 |
P4KE170-TB |
Reverse stand-off voltage: 138.00V transient voltage suppressor |
Won-Top Electronics |
| 209 |
P4KE170C |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA. |
Bytes |
| 210 |
P4KE170C |
138.00V; 400W transient voltage suppressor |
Diodes |
| | | |
