| No. |
Part Name |
Description |
Manufacturer |
| 211 |
P4KE170C-T3 |
Reverse stand-off voltage: 138.00V transient voltage suppressor |
Won-Top Electronics |
| 212 |
P4KE170C-TB |
Reverse stand-off voltage: 138.00V transient voltage suppressor |
Won-Top Electronics |
| 213 |
P6KE150A |
128.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 214 |
P6KE150A-T3 |
Reverse stand-off voltage: 128.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 215 |
P6KE150A-TB |
Reverse stand-off voltage: 128.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 216 |
P6KE150CA |
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 128.00 V. Test current IT = 1 mA. |
Bytes |
| 217 |
P6KE150CA-T3 |
Reverse stand-off voltage: 128.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 218 |
P6KE150CA-TB |
Reverse stand-off voltage: 128.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 219 |
P6KE170 |
138.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 220 |
P6KE170-T3 |
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 221 |
P6KE170-TB |
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 222 |
P6KE170C |
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA. |
Bytes |
| 223 |
P6KE170C-T3 |
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 224 |
P6KE170C-TB |
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 225 |
SG531H48.0000M |
Crystal oscillator, 48.0000MHz |
Epson Company |
| 226 |
SG531H48.0000M |
Crystal oscillator, 48.0000MHz |
Epson Company |
| 227 |
SG531P8.0000M |
Crystal oscillator, 8.0000MHz |
Epson Company |
| 228 |
SG531P8.0000M |
Crystal oscillator, 8.0000MHz |
Epson Company |
| 229 |
TIP100 |
80.000W Darlington NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 1000 - 20000 hFE. |
Continental Device India Limited |
| 230 |
TIP101 |
80.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 1000 - 20000 hFE. |
Continental Device India Limited |
| 231 |
TIP102 |
80.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 200 hFE. |
Continental Device India Limited |
| 232 |
TIP105 |
80.000W Darlington PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 200 hFE. |
Continental Device India Limited |
| 233 |
TIP106 |
80.000W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. |
Continental Device India Limited |
| 234 |
TIP107 |
80.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 200 hFE. |
Continental Device India Limited |
| 235 |
TIP130 |
70.000W Darlington NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 500 hFE. |
Continental Device India Limited |
| 236 |
TIP131 |
70.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 500 hFE. |
Continental Device India Limited |
| 237 |
TIP132 |
70.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 - 15000 hFE. |
Continental Device India Limited |
| 238 |
TIP135 |
70.000W Darlington PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 500 hFE. |
Continental Device India Limited |
| 239 |
TIP136 |
70.000W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 500 hFE. |
Continental Device India Limited |
| 240 |
TIP137 |
70.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 500 hFE. |
Continental Device India Limited |
| | | |
