| No. |
Part Name |
Description |
Manufacturer |
| 181 |
28C256API-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 182 |
28C256APM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 183 |
28C256ASC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 184 |
28C256ASI-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 185 |
28C256ASM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 186 |
28C256ATC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 187 |
28C256ATI-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 188 |
28C256ATM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 189 |
29C010JC-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 190 |
29C010JI-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 191 |
29C010JM-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 192 |
29C010PC-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 193 |
29C010PI-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 194 |
29C010PM-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 195 |
29C010TC-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 196 |
29C010TI-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 197 |
29C010TM-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 198 |
29C021JC-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 199 |
29C021JI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 200 |
29C021JM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 201 |
29C021PC-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 202 |
29C021PI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 203 |
29C021PM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 204 |
29C021TC-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 205 |
29C021TI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 206 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 207 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 208 |
2SD1425 |
Silicon NPN triple diffused MESA high voltage 1500V transistor |
TOSHIBA |
| 209 |
2SD1426 |
Silicon NPN triple diffused MESA high voltage 1500V transistor |
TOSHIBA |
| 210 |
2SD1427 |
Silicon NPN triple diffused MESA high voltage 1500V transistor |
TOSHIBA |
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