| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SD1431 |
Silicon NPN triple diffused MESA high voltage 1500V transistor |
TOSHIBA |
| 212 |
2V095 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 150 V @ 1mA DC test current. |
NTE Electronics |
| 213 |
3EZ150D |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 214 |
3EZ150D1 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 215 |
3EZ150D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 1% tolerance. |
Motorola |
| 216 |
3EZ150D10 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 217 |
3EZ150D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 10% tolerance. |
Motorola |
| 218 |
3EZ150D2 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 219 |
3EZ150D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 2% tolerance. |
Motorola |
| 220 |
3EZ150D3 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 221 |
3EZ150D4 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 222 |
3EZ150D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. |
Motorola |
| 223 |
3PMT5 |
POWERMITE Low Profile 1500 Watt Transient Voltage Suppressor |
Microsemi |
| 224 |
3VR150 |
3 Watt Epoxy Silicon Zener Diode 150V |
Transitron Electronic |
| 225 |
ARF448A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 250W 65MHz |
Advanced Power Technology |
| 226 |
ARF448B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 250W 65MHz |
Advanced Power Technology |
| 227 |
ARF449A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 150W 120MHz |
Advanced Power Technology |
| 228 |
ARF449B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 150W 120MHz |
Advanced Power Technology |
| 229 |
ARF450 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 500W 120MHz |
Advanced Power Technology |
| 230 |
AS29F010-150LC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 231 |
AS29F010-150PC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 232 |
AS29F010-150TC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 233 |
AS29F040-150LC |
5V 512K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 234 |
AS29F040-150LI |
5V 512K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 235 |
AS29F040-150TC |
5V 512K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 236 |
AS29F040-150TI |
5V 512K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 237 |
BY228GP |
Clamper / Damper Glass Passivated Rectifier, Forward Current 2.5A, Reverse Voltage 1500V |
Vishay |
| 238 |
BYS459-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
| 239 |
BYS459-1500S |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 10A Reverse Recovery Time 220ns |
Vishay |
| 240 |
BYS459B-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
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