| No. |
Part Name |
Description |
Manufacturer |
| 181 |
50SI4R |
Silicon rectifier diode 50A |
IPRS Baneasa |
| 182 |
50SI5 |
Silicon rectifier diode 50A |
IPRS Baneasa |
| 183 |
50SI5R |
Silicon rectifier diode 50A |
IPRS Baneasa |
| 184 |
50SI6 |
Silicon rectifier diode 50A |
IPRS Baneasa |
| 185 |
50SI6R |
Silicon rectifier diode 50A |
IPRS Baneasa |
| 186 |
50SI8 |
Silicon rectifier diode 50A |
IPRS Baneasa |
| 187 |
50SI8R |
Silicon rectifier diode 50A |
IPRS Baneasa |
| 188 |
6A05L-T6 |
Diode 50V 6A 2-Pin Case R-6 T/R |
New Jersey Semiconductor |
| 189 |
6A05L-T6T |
Diode 50V 6A 2-Pin Case R-6 T/R |
New Jersey Semiconductor |
| 190 |
6A10 |
Diode 50V 6A 2-Pin Case R-6 |
New Jersey Semiconductor |
| 191 |
AD8367S |
Aerospace 500 MHz, 45 dB Linear-in-dB Variable Gain Amplifier |
Analog Devices |
| 192 |
AD9780 |
Dual 12-Bit, LVDS Interface 500 MSPS DAC |
Analog Devices |
| 193 |
AD9781 |
Dual 14-Bit, LVDS Interface 500 MSPS DAC |
Analog Devices |
| 194 |
AD9783 |
Dual 16-Bit, LVDS Interface 500 MSPS DAC |
Analog Devices |
| 195 |
ADCH-80 |
RF Choke 50 MHz to 10000 MHz |
Mini-Circuits |
| 196 |
AM100S |
1.0 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 50 V. |
Comchip Technology |
| 197 |
AM150S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 50 V. |
Comchip Technology |
| 198 |
ARZ140M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 199 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 200 |
ARZ140M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 201 |
ARZ220M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 202 |
ARZ220M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 203 |
ARZ220M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 204 |
BD3925FP-C |
Automotive 500mA Voltage Tracker |
ROHM |
| 205 |
BD3925FP-CE2 |
Automotive 500mA Voltage Tracker |
ROHM |
| 206 |
BD3925HFP-C |
Automotive 500mA Voltage Tracker |
ROHM |
| 207 |
BD3925HFP-CTR |
Automotive 500mA Voltage Tracker |
ROHM |
| 208 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 209 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 210 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
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