| No. |
Part Name |
Description |
Manufacturer |
| 211 |
AD9780 |
Dual 12-Bit, LVDS Interface 500 MSPS DAC |
Analog Devices |
| 212 |
AD9781 |
Dual 14-Bit, LVDS Interface 500 MSPS DAC |
Analog Devices |
| 213 |
AD9783 |
Dual 16-Bit, LVDS Interface 500 MSPS DAC |
Analog Devices |
| 214 |
ADCH-80 |
RF Choke 50 MHz to 10000 MHz |
Mini-Circuits |
| 215 |
AM100S |
1.0 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 50 V. |
Comchip Technology |
| 216 |
AM150S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 50 V. |
Comchip Technology |
| 217 |
ARZ140M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 218 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 219 |
ARZ140M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 220 |
ARZ220M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 221 |
ARZ220M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 222 |
ARZ220M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 223 |
BD3925FP-C |
Automotive 500mA Voltage Tracker |
ROHM |
| 224 |
BD3925FP-CE2 |
Automotive 500mA Voltage Tracker |
ROHM |
| 225 |
BD3925HFP-C |
Automotive 500mA Voltage Tracker |
ROHM |
| 226 |
BD3925HFP-CTR |
Automotive 500mA Voltage Tracker |
ROHM |
| 227 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 228 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 229 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 230 |
BGA420 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 231 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 232 |
BU35TH5WNVX |
Versatile Package 500mA FULL CMOS LDO Regulator |
ROHM |
| 233 |
BU35TH5WNVX-TL |
Versatile Package 500mA FULL CMOS LDO Regulator |
ROHM |
| 234 |
BYV32-100 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 235 |
BYV32-150 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 236 |
BYV32-200 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 237 |
BYV32-50 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 238 |
BYVB32-100 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 239 |
BYVB32-150 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| 240 |
BYVB32-200 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V |
Vishay |
| | | |
