| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3055/1 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 182 |
2N3055/10 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 183 |
2N3055/2 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 184 |
2N3055/3 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 185 |
2N3055/4 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 186 |
2N3055/5 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 187 |
2N3055/6 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 188 |
2N3055/7 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 189 |
2N3055/8 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 190 |
2N3055/9 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 191 |
2N3055E |
Silicon epitaxial-base NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 192 |
2N3055H |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 193 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 194 |
2N3055W |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 195 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 196 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 197 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
| 198 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 199 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 200 |
2N3439 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 201 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 202 |
2N3440 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 203 |
2N3441 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 204 |
2N3442 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 205 |
2N3442 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 206 |
2N3458 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 207 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 208 |
2N3496 |
0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 209 |
2N3497 |
0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 210 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
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