| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
| 212 |
2N3501 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 213 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 214 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 215 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 216 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 217 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 218 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 219 |
2N3771 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 220 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 221 |
2N3772 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 222 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
| 223 |
2N3773 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 224 |
2N3821 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 225 |
2N3822 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 226 |
2N3823 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 227 |
2N3824 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 228 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 229 |
2N3966 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 230 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 231 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 232 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 233 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 234 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
| 235 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 236 |
2N404 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 237 |
2N4091 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 238 |
2N4091A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 239 |
2N4092 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 240 |
2N4092A |
N channel field effect transistor (metal can) |
SESCOSEM |
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