| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SB341H |
Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output |
Hitachi Semiconductor |
| 182 |
2SB367 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output |
Hitachi Semiconductor |
| 183 |
2SB367H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 184 |
2SB368 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output |
Hitachi Semiconductor |
| 185 |
2SB368H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 186 |
2SB370 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 187 |
2SB370A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 188 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 189 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 190 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 191 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
| 192 |
2SB471 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 193 |
2SB472 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 194 |
2SB496 |
Germanium Transistor PNP Alloyed Junction, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 195 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
| 196 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 197 |
2SB75 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 198 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 199 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 200 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 201 |
2SB77 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 202 |
2SB77A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 203 |
2SC1055H |
Transistor Silicon NPN Triple Diffused, intended for use in Power Switching Regulator |
Hitachi Semiconductor |
| 204 |
2SC1059 |
Transistor Silicon NPN Triple Diffused LTP, intended for use in Class A Output Amplifier |
Hitachi Semiconductor |
| 205 |
2SC1060 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 206 |
2SC1061 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 207 |
2SC116T |
Silicon Transistor NPN Triple Diffued Planar, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 208 |
2SC1222 |
NPN silicon transistor designed for use in AF low noise amplifier |
NEC |
| 209 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 210 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
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