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Datasheets for FOR US

Datasheets found :: 1884
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No. Part Name Description Manufacturer
61 2N3424 Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers Motorola
62 2N3425 Dual NPN silicon transistor designed for use as a high-frequency sense amplifier Motorola
63 2N3515 Dual NPN silicon transistor for use as a differential amplifier Motorola
64 2N3518 Dual NPN silicon transistor for use as a differential amplifier Motorola
65 2N4234 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
66 2N4235 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
67 2N4236 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
68 2N5161 PNP silicon RF power transistor for use in military and industrial equipment Motorola
69 2N5162 PNP silicon RF power transistor for use in military and industrial equipment Motorola
70 2N6107 PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. USHA India LTD
71 2N918 NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications Motorola
72 2SA1007 Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
73 2SA1007A Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
74 2SA12 Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
75 2SA12H Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
76 2SA15 Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter Hitachi Semiconductor
77 2SA1584 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
78 2SA15H Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier Hitachi Semiconductor
79 2SA1634 TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE ROHM
80 2SA1635 TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE ROHM
81 2SA1758 TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE ROHM
82 2SA1760 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
83 2SA1780 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
84 2SA17H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
85 2SA1809 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
86 2SA1818 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
87 2SA1820 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
88 2SA1861 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
89 2SA1884 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
90 2SA18H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor


Datasheets found :: 1884
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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