| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 182 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 183 |
2N6073B |
Sensitive Gate Triacs |
ON Semiconductor |
| 184 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 185 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 186 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 187 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 188 |
2N6075A |
Sensitive Gate Triacs |
ON Semiconductor |
| 189 |
2N6075B |
Sensitive Gate Triacs |
ON Semiconductor |
| 190 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
| 191 |
2PG301 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 192 |
2PG302 |
For Insulated Gate Bipolar Transistor |
Panasonic |
| 193 |
2PG303 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 194 |
2PG304 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 195 |
2PG351 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 196 |
2PG352 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 197 |
2PG353 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 198 |
2PG401 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 199 |
2PG402 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 200 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 201 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 202 |
2SK2496 |
RF Single Gate FETs |
TOSHIBA |
| 203 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 204 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 205 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 206 |
320PJT200 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 207 |
320PJT200A |
V(rrm/drm): 2000V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 208 |
320PJT250 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 209 |
320PJT250A |
V(rrm/drm): 2500V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 210 |
321 |
Quad 2 INPUT GATE |
Amelco Semiconductor |
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