| No. |
Part Name |
Description |
Manufacturer |
| 211 |
321B |
Quad 2 INPUT GATE |
Amelco Semiconductor |
| 212 |
321BG |
Quad 2 INPUT GATE |
Amelco Semiconductor |
| 213 |
321C |
Quad 2 INPUT GATE |
Amelco Semiconductor |
| 214 |
322 |
Dual 5 INPUT Gate |
Amelco Semiconductor |
| 215 |
322B |
Dual 5 INPUT Gate |
Amelco Semiconductor |
| 216 |
322C |
Dual 5 INPUT Gate |
Amelco Semiconductor |
| 217 |
323 |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 218 |
323B |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 219 |
323C |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 220 |
350PEQ100W |
V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 221 |
350PEQ110W |
V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 222 |
350PEQ120W |
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 223 |
350PEQ50W |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 224 |
350PEQ60W |
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 225 |
350PEQ70W |
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 226 |
350PEQ80W |
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 227 |
350PEQ90W |
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 228 |
350PJT100 |
V(rrm/drm): 1000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 229 |
350PJT120 |
V(rrm/drm): 1200V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 230 |
350PJT140 |
V(rrm/drm): 1400V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 231 |
350PJT160 |
V(rrm/drm): 1600V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 232 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 233 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 234 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 235 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 236 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 237 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 238 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 239 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 240 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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