No. |
Part Name |
Description |
Manufacturer |
181 |
2N3810A |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
182 |
2N3810A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
183 |
2N3811 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
184 |
2N3811 |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
185 |
2N3811A |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
186 |
2N3811A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
187 |
2N3812 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
188 |
2N3813 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
189 |
2N3814 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
190 |
2N3815 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
191 |
2N3816 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
192 |
2N3816A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
193 |
2N3817 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
194 |
2N3817A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
195 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
196 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
197 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
198 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
199 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
200 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
201 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
202 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
203 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
204 |
2N4015 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
205 |
2N4015 |
Silicon transistor differential amplifiers |
SGS-ATES |
206 |
2N4016 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
207 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
208 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
209 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
210 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
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