| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 212 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 213 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
| 214 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 215 |
2N5306 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 216 |
2N5308 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 217 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 218 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 219 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 220 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 221 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 222 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 223 |
2N5457 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 224 |
2N5458 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 225 |
2N5459 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 226 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 227 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 228 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 229 |
2N5794 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 230 |
2N5796 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 231 |
2N6034 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 232 |
2N6035 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 233 |
2N6036 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 234 |
2N6037 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 235 |
2N6038 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 236 |
2N6039 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 237 |
2N6040 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 238 |
2N6041 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 239 |
2N6042 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 240 |
2N6043 |
Leaded Power Transistor Darlington |
Central Semiconductor |
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