No. |
Part Name |
Description |
Manufacturer |
181 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
182 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
183 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
184 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
185 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
186 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
187 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
188 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
189 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
190 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
191 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
192 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
193 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
194 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
195 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
196 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
197 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
198 |
2SC5288 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
199 |
2SC5288-T1 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
200 |
2SC5289 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
201 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
202 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
203 |
AAT2503IZL-BAA-T1 |
Adjustable Three-Channel Regulator |
Skyworks Solutions |
204 |
AAT2504IZL-BAA-T1 |
Adjustable Three-Channel Regulator |
Skyworks Solutions |
205 |
ADL5354 |
2200 MHz TO 2700 MHz, Dual-Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun |
Analog Devices |
206 |
ADL5356 |
1200 MHz TO 2500 MHz, Dual-Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun |
Analog Devices |
207 |
ADL5358 |
500 MHz TO 1700 MHz, Dual-Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun |
Analog Devices |
208 |
AIC1782 |
Dual-Battery Charge Controller |
Analog Integrations Corporation |
209 |
AIC1782CN |
Dual-Battery Charge Controller |
Analog Integrations Corporation |
210 |
AIC1782CS |
Dual-Battery Charge Controller |
Analog Integrations Corporation |
| | | |