| No. |
Part Name |
Description |
Manufacturer |
| 241 |
AM81214-006 |
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS |
SGS Thomson Microelectronics |
| 242 |
AM81214-006 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 243 |
AM81214-015 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 244 |
AM81214-015 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 245 |
AM81214-030 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 246 |
AM81214-030 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 247 |
AM81214-060 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 248 |
AM81214-060 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 249 |
AN565 |
MEDIAN-TIME-TO-FAILURE (MTF) OF A L-BAND POWER TRANSISTOR UNDER RF CONDITIONS |
SGS Thomson Microelectronics |
| 250 |
ATC18 |
The ATC18 Cell-based ASIC (CBIC) family features a comprehensive library of 0.18-micron standard logic and I/O cells designed to operate with a supply voltage of 1.8V +/- 0.15V and memory cells compiled to the precise requirements of the d |
Atmel |
| 251 |
ATC18M |
0.18 �m CMOS Cell-based ASIC for Military Use |
Atmel |
| 252 |
ATC18RHA |
Rad. Hard 0.18 �m CMOS Cell-based ASIC |
Atmel |
| 253 |
ATC20 |
The ATC20 Cell-based ASIC (CBIC) family features a comprehensive library of 0.21-micron standard logic and I/O cells designed to operate with a supply voltage of 1.8V +/- 0.15V and memory cells compiled to the precise requirements of the d |
Atmel |
| 254 |
ATC25 |
The ATC25 Cell-based ASIC (CBIC) family features a comprehensive library of 0.25-micron standard logic and I/O cells designed to operate with a supply voltage of 2.5V +/- 0.25V and memory cells compiled to the precise requirements of the d |
Atmel |
| 255 |
ATC35 |
The ATC35 Cell-based ASIC (CBIC) family features a comprehensive library of 0.35-micron standard logic and I/O cells designed to operate with a supply voltage of 3.3V +/- 0.3V and memory cells compiled to the precise requirements of the de |
Atmel |
| 256 |
BCM94309-M |
802.11a/b/54g™ Dual-Band Client Reference Design |
Broadcom |
| 257 |
BCM94309-M |
802.11a/b/54g™ Dual-Band Client Reference Design |
Broadcom |
| 258 |
BCM94309-M |
802.11a/b/54g™ Dual-Band Client Reference Design |
Broadcom |
| 259 |
BCM94704 |
802.11a/54g™ Dual-Band AP/Router Reference Design |
Broadcom |
| 260 |
BCM94704 |
802.11a/54g™ Dual-Band AP/Router Reference Design |
Broadcom |
| 261 |
BCM94704 |
802.11a/54g™ Dual-Band AP/Router Reference Design |
Broadcom |
| 262 |
BD166 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 263 |
BD168 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 264 |
BD170 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 265 |
BD201 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. |
General Electric Solid State |
| 266 |
BD201 |
N-P-N Silicon Epitaxial-BASE A.F. Power Transistor |
Mullard |
| 267 |
BD202 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. |
General Electric Solid State |
| 268 |
BD203 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. |
General Electric Solid State |
| 269 |
BD203 |
N-P-N Silicon Epitaxial-BASE A.F. Power Transistor |
Mullard |
| 270 |
BD204 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. |
General Electric Solid State |
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