| No. |
Part Name |
Description |
Manufacturer |
| 331 |
BD534 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -45V, 50W. |
General Electric Solid State |
| 332 |
BD534 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 333 |
BD534 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 334 |
BD535 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
| 335 |
BD535 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 336 |
BD535 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 337 |
BD536 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. |
General Electric Solid State |
| 338 |
BD536 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 339 |
BD536 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 340 |
BD537 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 50W. |
General Electric Solid State |
| 341 |
BD537 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 342 |
BD537 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 343 |
BD538 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 50W. |
General Electric Solid State |
| 344 |
BD538 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 345 |
BD538 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 346 |
BD663 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 347 |
BD663 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 348 |
BD664 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 349 |
BD664 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 350 |
BD675 |
NPN Epitaxial-Base - High current gain (Darlington) |
SESCOSEM |
| 351 |
BD675A |
NPN Epitaxial-Base - High current gain (Darlington) |
SESCOSEM |
| 352 |
BD675A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 353 |
BD675A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 354 |
BD676 |
PNP Epitaxial-Base - High current gain (Darlington) |
SESCOSEM |
| 355 |
BD676A |
PNP Epitaxial-Base - High current gain (Darlington) |
SESCOSEM |
| 356 |
BD676A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 357 |
BD676A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 358 |
BD677 |
NPN Epitaxial-Base - High current gain (Darlington) |
SESCOSEM |
| 359 |
BD677 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 360 |
BD677 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| | | |
