| No. |
Part Name |
Description |
Manufacturer |
| 181 |
16M0UC |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 182 |
16M0US |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 183 |
16M0V |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 184 |
16M0VC |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 185 |
16M0VS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 186 |
16M0W |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 187 |
16M0WC |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 188 |
16M0WS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 189 |
16M0X |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 190 |
16M0XC |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 191 |
16M0XS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 192 |
16SCYQ030C |
16A 30V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 193 |
16SCYQ030CSCS |
16A 30V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 194 |
16SCYQ045C |
16A 45V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 195 |
16SCYQ045CSCS |
16A 45V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 196 |
16SCYQ060C |
16A 60V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 197 |
16SYJQ045C |
16A 45V Hi-Rel Schottky Common Anode Diode in a D2-Pak package |
International Rectifier |
| 198 |
16SYJQ045CSCS |
16A 45V Hi-Rel Schottky Common Anode Diode in a D2-Pak package |
International Rectifier |
| 199 |
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 200 |
1719-2 |
2 W, 2 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 201 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 202 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
| 203 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 204 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 205 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 206 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 207 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 208 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 209 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 210 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
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