No. |
Part Name |
Description |
Manufacturer |
211 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
212 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
213 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
214 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
215 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
216 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
217 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
218 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
219 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
220 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
221 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
222 |
1N4388 |
Silicon varactor diode for high-frequency harmonic generation applications |
Motorola |
223 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
224 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
225 |
1N5163 |
Harmonic Generator |
Motorola |
226 |
1N5164 |
Harmonic Generator |
Motorola |
227 |
1N6672 |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
228 |
1N6672JAN |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
229 |
1N6672JANTX |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
230 |
1N6672JANTXV |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
231 |
1N6673 |
30 A 400V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
232 |
1N6674 |
30 A 500V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
233 |
1S1579 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
234 |
1S1580 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
235 |
2001 |
1 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
236 |
2003 |
3 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
237 |
2005 |
5 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
238 |
200CNQ035 |
35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
239 |
200CNQ040 |
40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
240 |
200CNQ045 |
45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
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