| No. |
Part Name |
Description |
Manufacturer |
| 181 |
24LC22AT-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 182 |
24LCS21 |
The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s advanced monitors. The 24LCS21 represents a simple, low-cost route to meeting the stringent standards |
Microchip |
| 183 |
24LCS21-I/P |
The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s ... |
Microchip |
| 184 |
24LCS21-I/SN |
The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s ... |
Microchip |
| 185 |
24LCS21/P |
The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s ... |
Microchip |
| 186 |
24LCS21/SN |
The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s ... |
Microchip |
| 187 |
24LCS21T-I/SN |
The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s ... |
Microchip |
| 188 |
24LCS21T/SN |
The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s ... |
Microchip |
| 189 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 190 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 191 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 192 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 193 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 194 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 195 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 196 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 197 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 198 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 199 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
| 200 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 201 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 202 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 203 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 204 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 205 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 206 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 207 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 208 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 209 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 210 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
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